Metal-Insulator-Metal Capacitor and Method of Fabricating

ABSTRACT

Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall of a via. The sidewall contact or the bottle neck of the electrode may burn out to form a high impedance path when the leakage current exceeds a specification, while the sidewall contact or the bottle neck of the electrode has no impact for normal MIM operations. The MIM capacitors may be used as decoupling capacitors.

BACKGROUND

Complementary metal-oxide-semiconductor (CMOS) is a technology forconstructing digital integrated circuits (IC) such as microprocessors,microcontrollers, and others, or analog circuits such as image sensors,data converters, and transceivers for many types of communication. An ICmay comprise digital logic parts such as transistors, plus othercomponents such as resistors and capacitors, connected together by metallayers.

Many kinds of capacitors such as metal-oxide-semiconductor (MOS)capacitors, PN junction capacitors, polysilicon-insulator-polysilicon(PIP) capacitors, and metal-insulator-metal (MIM) capacitors are used insemiconductor devices. In particular, the MIM capacitor offers reducedelectrode resistance with wide ranges of applications.

An IC may comprise a plurality of contacts interconnected by multiplemetal layers, which are separated by dielectric layers made ofinsulating materials forming inter-metal dielectric (IMD) layers.Interconnections between different metal layers are made by vias, whichgo through insulating dielectric layers. Vias allow for communicationsbetween devices such as capacitors formed at metal layers to communicatewith other devices in the metal layers or directly with thesemiconductor devices in the substrate.

Leakage current due to MIM capacitor defects can cause problems for thesystems containing the MIM capacitors. To ensure a high product yield,it is desirable for an MIM capacitor to be able to self repair in theevent of current leakage. There is a continuing need in thesemiconductor device processing art for improved MIM capacitorstructures and manufacturing processes to improve the yield in the eventof current leakage.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates an embodiment of a metal-insulator-metal (MIM)capacitor;

FIGS. 2( a)-2(c) illustrate another embodiment of a MIM capacitor;

FIGS. 3( a)-3(c) illustrate another embodiment of a MIM capacitor;

FIGS. 4( a)-4(b) illustrate another embodiment of a MIM capacitor; and

FIGS. 5( a)-5(b) illustrate an embodiment of two MIM capacitors.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the preferredembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments of the present disclosure arediscussed in detail below. It should be appreciated, however, that theembodiments of the present disclosure provide many applicable conceptsthat can be embodied in a wide variety of specific contexts. Thespecific embodiments discussed are merely illustrative of specific waysto make and use the disclosure, and do not limit the scope of thedisclosure.

Methods and apparatus are disclosed for manufacturingmetal-insulator-metal (MIM) capacitors that are able to self repair inthe event of current leakage. The MIM capacitors may comprise anelectrode, which may be a top or a bottom electrode, which has a bottleneck. A top or a bottom electrode may be in contact with a sidewall of avia. The sidewall contact or the bottle neck of the electrode may burnout to form a high impedance path when the leakage current exceeds aspecification, while the sidewall contact or the bottle neck of theelectrode has no impact for normal MIM operations. The MIM capacitorsmay be used as decoupling capacitors.

In FIG. 1, a MIM capacitor 100 may be formed within an inter-metaldielectric (IMD) layer 005 above a substrate 001. An inter-layerdielectric (ILD) layer 002, and a plurality of IMD layers 003 and 004,may be formed on the substrate 001 as well. A plurality of metal layers021, 022, and 023 may be formed on the ILD layer 002, intervening withthe IMD layers. There may be more metal layers formed above the MIMcapacitor 100, which are not shown.

The substrate 001 may comprise active devices such as transistors 203,where a plurality of drain and source regions of transistors are formedwithin the substrate. Shallow trench isolation (STI) region 201 may beformed in substrate 001 as well. The substrate 001 may comprise bulksilicon, doped or undoped, or an active layer of a silicon-on-insulator(SOI) substrate. Generally, an SOI substrate comprises a layer of asemiconductor material such as silicon, germanium, silicon germanium,SOI, silicon germanium on insulator (SGOI), or combinations thereof.Other substrates that may be used include multi-layered substrates,gradient substrates, or hybrid orientation substrates.

Active devices such as transistors 203 may be formed on the substrate001. As one of ordinary skill in the art will recognize, a wide varietyof devices such as transistors, resistors, inductors and the like may beused to generate the desired structural and functional requirements ofthe design. The devices 203 may be formed using any suitable methodseither within or else on the surface of the substrate 001.

An inter-layer dielectric (ILD) layer 002 may be formed on the substrate001. A first metal layer 021 may be formed over the ILD layer 002,comprising a plurality of metal contacts M1 connected to the deviceswithin the substrate by vias through the ILD layer 002. A second metallayer 022 may be formed on the first metal layer 021 separated by aninter-metal dielectric (IMD) layer 003, and a metal contact M2 islocated in the metal layer 022. The IMD layers are commonly known in theart as being the dielectric layers for forming metal lines and viastherein. The IMD layers may have a thickness ranging from perhaps 10,000Å to 30,000 Å. Similarly, an additional metal layer 023 may be formed onthe metal layer 022 and separated by the IMD layer 004, where a metalcontact 121 may be located. The metal contacts M1, M2, and 121 withinvarious metal layers are connected by a plurality of vias 124.

The number of metal layers 021 to 023, the number of IMD layers, and thenumber of vias are only for illustrative purposes and are not limiting.There could be other number of layers that is more or less than the 3metal layers. There may be other number of IMD layers, and other numberof vias, different from those shown in FIG. 1.

The MIM capacitor 100 within the IMD layer 005 may comprise a bottomelectrode 105, an insulator 103, and a top electrode 101. The topelectrode 101 may be connected to a via 102, which is further connectedto a top electrode pick up 123. The top electrode pick up 123 may beconnected to a power source Vdd. The bottom electrode 105 may beconnected to a via 104, which is further connected to a bottom electrodepick up 125. The bottom electrode pick up 125 may be connected to aground signal Vss. The bottom electrode pick up 125 and the topelectrode pick up 123 may be formed at a same metal layer, or atdifferent metal layers.

The MIM capacitor 100 may be used as a decoupling capacitor. Adecoupling capacitor (decap) is a popular means to reduce power supplynoise in integrated circuits. When used as a decoupling capacitor, theMIM capacitor 100 may have one of the bottom electrode 105 or topelectrode 101 connected to a power source VDD, and the other oneconnected to a ground signal VSS.

FIG. 1 is only for illustrative purposes and is not limiting. Forexample, there may be more than one MIM capacitor so formed. MIMcapacitors may be formed in different shapes such as cylindrical shape,a concave shape, a stacked shape, and so forth. The MIM capacitor 100shown in FIG. 1 may be a planar type MIM capacitor. There may be othertypes MIM capacitors, such as a crown type MIM capacitor. The circuit inFIG. 1 may comprise many other layers such as etching stop layers, whichare not shown.

The MIM capacitor 100 shown in FIG. 1 may be formed by some knownprocess or any process developed in the future. Each layer, such as theILD layer, or the IMD layers may be deposited by methods includingLPCVD, PECVD, or HDP-CVD. The patterning of the layers may be done usinga damascene process or a dual damascene process. Damascene meansformation of a patterned layer imbedded in another layer such that thetop surfaces of the two layers are coplanar. An IMD is deposited eitheron a substrate, or on top of another existing layer of metal. Once theIMD is deposited, portions of the IMD may be etched away to formrecessed features, such as trenches and vias, which can be filled withconductive material to connect different regions of the chip andaccommodate the conductive lines. A damascene process which createseither only trenches or vias is known as a single damascene process. Adamascene process which creates both trenches and vias at once is knownas a dual damascene process.

An embodiment of the MIM capacitor 100 is illustrated in FIGS. 2(a)-2(c). As shown in FIG. 2( a), the MIM capacitor 100 may comprise abottom electrode 105, an insulator 103, and a top electrode 101. The topelectrode 101 may be connected to a via 102, which is further connectedto a top electrode pick up 123. The top electrode pick up 123 may beconnected to a power source Vdd. The bottom electrode 105 may beconnected to a via 104, which is further connected to a bottom electrodepick up 125. The bottom electrode pick up 125 may be connected to aground signal Vss. The bottom electrode pick up 125 and the topelectrode pick up 123 may be formed at a same metal layer, or atdifferent metal layers.

Throughout the description, the bottom electrode 105 and the topelectrode 101 may be formed of titanium nitride (TiN), tantalum nitride(TaN), tungsten (W), tungsten nitride (WN), ruthenium (Ru), iridium(Ir), and platinum (Pt), Copper (Cu), Cu alloy, or combinations oftitanium (Ti) with titanium nitride. Generally, any otherlow-resistivity materials may be used as well.

An insulator 103 may be formed between the bottom electrode 105 and thetop electrode 101. The insulator 103 may include silicon dioxide (SiO₂),silicon nitride (Si₃N₄), aluminum oxide (Al₂O₃), hafnium silicates(HfSiON), tantalum oxide (Ta₂O₅), zirconium oxide (ZrO₂), hafnium oxide(HfO₂), titanium oxide (TiO₂), barium strontium titanate oxide (BST),strontium titanate oxide (STO), and combinations thereof. The insulator103 may comprise a plurality of sub-layers such as a first dielectricsub-layer and a second dielectric sub-layer, made of different materialof different thickness.

As illustrated in FIG. 2( a), the via 104 may be placed on a surface ofthe bottom electrode 105, connecting to the bottom electrode pick up125. The via 102 may be placed on a surface of a top electrode 101,connecting to the top electrode pick up 123.

As illustrated in FIG. 2( b), the bottom electrode 105 may comprisethree parts 1051, 1053, and 1055, when viewed in plain view, i.e., “topdown” view. The part 1051 is a part where the via 104 may be placed,which is also shown in FIG. 2( a). The part 1051 should be larger inarea than the area of the bottom of the via 104 so that the bottom ofthe via 104 may be completely placed on the part 1051. The part 1051 maybe a polygon, a rectangle, a square, a trapezoid, or any other shape.

The part of the bottom electrode 105 that is adjacent to the part 1051may be numbered as the part 1053. The part 1053 may be a polygon, atrapezoid, or some other shape. An edge A of the part 1053 shared withthe part 1051 may be longer than an edge B of the part 1053 shared withthe part 1055. For example, if the part 1053 is a trapezoid, then thebase edge A shared with the part 1051 is longer than the base edge Bshared with the part 1055.

The part 1055 of the bottom electrode 105 shares an edge B with the part1053. In an embodiment, the part 1055 may be a mirror image of theoverall shape of the combined parts 1051 and 1053. In anotherembodiment, the part 1055 may be a trapezoid, where the base edge Bshared with the part 1053 is shorter than the other base not shared.

The reduced length of the edge B of the part 1053 forms a bottle neck ofthe bottom electrode 105. If there is a current leakage, the contact atthe bottle neck part, which is the edge B, may be burned out to form ahigh impedance path when the leakage current exceeds a specification. Onthe other hand, the MIM capacitor 100 may function normally when thereis no current leakage.

Similar to FIG. 2( b), as illustrated in FIG. 2( c), the top electrode101 may comprise three parts, 1011, 1013, and 1015. The part 1011 may bea part where the bottom of the via 102 may be placed. The part 1011 maybe larger in area than the area of the bottom of the via 102 so that thebottom of the via 102 may be completely placed on the part 1011. Thepart 1011 may be a polygon, a rectangle, a square, a trapezoid, or anyother shape.

The part 1013 of the top electrode 101 may be adjacent to the part 1011.The part 1013 may be a polygon, a trapezoid, or some other shape. Anedge C of the part 1013 shared with the part 1011 may be longer than anedge D of the part 1013 shared with the part 1015. For example, if thepart 1013 is a trapezoid, then the base edge C shared with the part 1011is longer than the base edge D shared with the part 1015.

The part 1015 of the top electrode 101 shares an edge D with the part1013. In an embodiment, the part 1015 may be a mirror image of theoverall shape of the combined parts 1011 and 1013. In anotherembodiment, the part 1015 may be a trapezoid, where the base edge Dshared with the part 1013 is shorter than the other base not shared.

The reduced length of the edge D of the part 1013 forms a bottle neck ofthe top electrode 101. If there is a current leakage, the contact at thebottle neck part, which is the edge D, may be burned out to form a highimpedance path when the leakage current exceeds a specification. On theother hand, the MIM capacitor 100 may function normally when there is nocurrent leakage or limited current leakage.

Another embodiment of the MIM capacitor 100 may be illustrated in FIGS.3( a)-3(c). As shown in FIG. 3( a), the MIM capacitor 100 may comprise abottom electrode 105, an insulator 103, and a top electrode 101. The topelectrode 101 may be connected to a via 102, which is further connectedto a top electrode pick up 123. The top electrode pick up 123 may beconnected to a power source Vdd. The bottom electrode 105 may beconnected to a via 104, which is further connected to a bottom electrodepick up 125. The bottom electrode pick up 125 may be connected to aground signal Vss. The via 104 may be connected to a metal contact 121at a different metal layer. The bottom electrode pick up 125 and the topelectrode pick up 123 may be formed at a same metal layer, or atdifferent metal layers.

As illustrated in FIG. 3( a), the via 102 may be placed on a surface ofa top electrode 101, connecting to the top electrode pick up 123. Thebottom electrode 105 may be connected to the via 104 by contacting witha sidewall of the via 104.

More details of the contact between a sidewall of the via 104 and thebottom electrode 105 are shown in FIG. 3( b) in top view. As illustratedin FIG. 3( b), the bottom electrode 105 may comprise two parts 1051 and1053. The part 1053 may have a shape substantially similar to a shape ofthe top electrode 101, so that the two are overlapped in top view. Theshape of the part 1053 may be substantially similar to a shape of theinsulator 103 as well. The shape of the top electrode 101, which issubstantially similar to the shape of the part 1053, may have a largerarea than the bottom of the via 102, so that the via 102 may be placedon the surface of the top electrode 101. The part 1053 may be a polygon,a rectangle, a square, a trapezoid, or any other shape. A rectangleshape for the part 1053 is illustrated in FIG. 3( b).

The part 1051 of the bottom electrode 105 may be adjacent to the part1053. The part 1051 may be a polygon, a trapezoid, or some other shape.An edge A of the part 1051 shared with the part 1053 may be longer thanan edge B of the part 1051 shared with the sidewall of via 104. Forexample, if the part 1051 is a trapezoid, then the base edge A sharedwith the part 1053 is longer than the base edge B shared with thesidewall of via 104.

Another embodiment of the contact between a sidewall of the via 104 andthe bottom electrode 105 are shown in FIG. 3( c) in top view. Asillustrated in FIG. 3( c), the bottom electrode 105 may comprise threeparts 1051, 1053, and 1055. The part 1053 may have a shape substantiallysimilar to a shape of the top electrode 101, so that the two areoverlapped in top view. The shape of the part 1053 may be substantiallysimilar to a shape of the insulator 103 as well. The shape of the topelectrode 101, which is substantially similar to the shape of the part1053, may have a larger area than the bottom of the via 102, so that thevia 102 may be placed on the surface of the top electrode 101. The part1053 may be a polygon, a rectangle, a square, a trapezoid, or any othershape. A rectangle shape for the part 1053 is illustrated in FIG. 3( c).

The part of the bottom electrode 105 that is adjacent to the part 1053may be numbered as the part 1051. The part of the bottom electrode 105that is adjacent to the part 1051 and contacting with the side wall ofthe via 104 may be numbered as the part 1055.

The part 1051 may be a polygon, a trapezoid, or some other shape. Anedge A of the part 1051 shared with the part 1053 may be longer than anedge B of the part 1051 shared with the part 1055. An edge C of the part1055 is shared with the sidewall of via 104, which may be longer thanthe edge B as well. For example, if the part 1051 is a trapezoid, thenthe base edge A shared with the part 1053 is longer than the base edge Bshared with the part 1055, while the part 1055 may be a mirror image ofthe part 1051, as shown in FIG. 3( c). In some other embodiment, thepart 1055 may be a mirror image of the combined shape of the part 1051and part 1053.

If there is a current leakage of the MIM capacitor 100, the contactbetween the bottom electrode 105 and a sidewall of the via 104 may beburned out to form a high impedance path when the leakage currentexceeds a specification. On the other hand, the MIM capacitor 100 mayfunction normally when there is no current leakage.

Another embodiment of the MIM capacitor 100 may be illustrated in FIGS.4( a)-4(b). As shown in FIG. 4( a), the MIM capacitor 100 may comprise abottom electrode 105, an insulator 103, and a top electrode 101. The topelectrode 101 may be connected to a via 102, which is further connectedto a top electrode pick up 123. The top electrode pick up 123 may beconnected to a power source Vdd. The bottom electrode 105 may beconnected to a via 104, which is further connected to a bottom electrodepick up 125. The bottom electrode pick up 125 may be connected to aground signal Vss. The via 102 may be connected to a metal contact 121at a different metal layer. The bottom electrode pick up 125 and the topelectrode pick up 123 may be formed at a same metal layer, or atdifferent metal layers.

As illustrated in FIG. 4( a), the via 104 may be placed on a surface ofthe bottom electrode 105, connecting to a bottom electrode pick up 125.The top electrode 101 is connected to the via 102 by contacting with asidewall of the via 102.

More details of the contact between the via 102 and the top electrode101 are shown in FIG. 4( b) in top view. As illustrated in FIG. 4( b),the top electrode 101 may comprise two parts 1011 and 1013. The part1013 may have a shape substantially similar to a shape of the insulator103, so that the two are overlapped. It may further be substantiallysimilar to a shape of the bottom electrode 105. The shape of the bottomelectrode 105, which may be substantially similar to the shape of thepart 1013, may have a larger area than the bottom of the via 104, sothat the via 104 may be placed on the surface of the bottom electrode105. The part 1013 may be a polygon, a rectangle, a square, a trapezoid,or any other shape. A rectangle shape for the part 1013 is illustratedin FIG. 4( b).

The part 1011 of the top electrode 101 may be adjacent to the part 1013.The part 1011 may be a polygon, a trapezoid, or some other shape. Anedge A of the part 1011 shared with the part 1013 may be longer than anedge B of the part 1011 shared with the sidewall of via 102. Forexample, if the part 1011 is a trapezoid, then the base edge A sharedwith the part 1013 is longer than the base edge B shared with thesidewall of via 102.

If there is a current leakage of the MIM capacitor 100, the contactbetween the top electrode 101 and a sidewall of the via 102 may beburned out to form a high impedance path when the leakage currentexceeds a specification. On the other hand, the MIM capacitor 100 mayfunction normally when there is no current leakage.

Different MIM capacitors may be connected in a chain. An embodiment oftwo MIM capacitors 100 and 300 may be illustrated in FIGS. 5( a)-5(b).As shown in FIG. 5( a), the MIM capacitor 100 may comprise a bottomelectrode 105, an insulator 103, and a top electrode 101. The topelectrode 101 may be connected to a via 102, which is further connectedto a top electrode pick up 123. The top electrode pick up 123 may beconnected to a power source Vdd. The bottom electrode 105 may beconnected to a via 104, which is further connected to a bottom electrodepick up 125. The bottom electrode pick up 125 may be connected to aground signal Vss.

The MIM capacitor 300 may comprise a bottom electrode 111, an insulator109, and a top electrode 107. The top electrode 107 may be connected toa via 106, which is further connected to a top electrode pick up 127.The top electrode pick up 127 may be connected to a power source Vdd.The bottom electrode 111 may be connected to the via 104, which isshared with the MIM capacitor 100. The via 104 is further connected to abottom electrode pick up 125. The bottom electrode pick up 125 may beconnected to a ground signal Vss. The bottom electrode pick up 125 andthe top electrode pick up 127 may be formed at a same metal layer, or atdifferent metal layers.

As illustrated in FIG. 5( a), the via 102 may be placed on a surface ofa top electrode 101, connecting to a top electrode pick up 123. Thebottom electrode 105 is connected to the via 104 by contacting with asidewall of the via 104. The via 106 may be placed on a surface of a topelectrode 107, connecting to a top electrode pick up 127. The bottomelectrode 111 is connected to the via 104 by contacting with anothersidewall of the via 104.

More details of the contact between sidewall of the via 104 and thebottom electrode 105 or the bottom electrode 111 are shown in FIG. 5( b)in top view. As illustrated in FIG. 5( b), the bottom electrode 105 maycomprise two parts 1051 and 1053. The part 1053 may have a shapesubstantially similar to a shape of the top electrode 101, so that thetwo are overlapped in top view. The part 1053 may have a shapesubstantially similar to a shape of the insulator 103. The shape of thetop electrode 101, which is substantially similar to a shape of the part1053, may have a larger area than the bottom of the via 102, so that thevia 102 may be placed on the surface of the top electrode 101. The part1053 may be a polygon, a rectangle, a square, a trapezoid, or any othershape. A rectangle shape for the part 1053 is illustrated in FIG. 3( b).

The part 1051 of the bottom electrode 105 may be adjacent to the part1053. The part 1051 may be a polygon, a trapezoid, or some other shape.An edge A of the part 1051 shared with the part 1053 may be longer thanan edge B of the part 1051 shared with the sidewall of via 104. Forexample, if the part 1051 is a trapezoid, then the base edge A sharedwith the part 1053 is longer than the base edge B shared with thesidewall of via 104.

The bottom electrode 111 may comprise two parts 1111 and 1113. The part1113 may have a shape substantially similar to a shape of the topelectrode 107, so that the two are overlapped in top view. The shape ofthe top electrode 107, which is substantially similar to the shape ofthe part 1113, may have a larger area than the bottom of the via 106, sothat the via 106 may be placed on the surface of the top electrode 107.The part 1113 may be a polygon, a rectangle, a square, a trapezoid, orany other shape. A rectangle shape for the part 1113 is illustrated inFIG. 5( b).

The part 1111 of the bottom electrode 111 may be adjacent to the part1113. The part 1111 may be a polygon, a trapezoid, or some other shape.An edge C of the part 1111 shared with the part 1113 may be longer thanan edge D of the part 1111 shared with another sidewall of via 104. Forexample, if the part 1111 is a trapezoid, then the base edge C sharedwith the part 1113 is longer than the base edge D shared with thesidewall of via 104.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps. In addition, eachclaim constitutes a separate embodiment, and the combination of variousclaims and embodiments are within the scope of the invention.

What is claimed is:
 1. An MIM capacitor, comprising: a top electrodewith a first bottle neck; a bottom electrode with a second bottle neck;and an insulator between the top electrode and the bottom electrode. 2.The MIM capacitor of claim 1, further comprising: a first via placed ona surface of the top electrode; and a second via placed on a surface ofthe bottom electrode.
 3. The MIM capacitor of claim 2, furthercomprising: a top electrode pick up connected to the first via; and abottom electrode pick up connected to the second via.
 4. The MIMcapacitor of claim 3, wherein: the top electrode pick up is connected toa power source; and the bottom electrode pick up is connected to aground signal.
 5. The MIM capacitor of claim 1, wherein the topelectrode comprises a material selected from a group consistingessentially of titanium nitride (TiN), tantalum nitride (TaN), tungsten(W), tungsten nitride (WN), ruthenium (Ru), iridium (Ir), platinum (Pt),Copper (Cu), Cu alloy, or combinations of titanium (Ti) with titaniumnitride.
 6. The MIM capacitor of claim 1, wherein the insulatorcomprises a material selected from a group consisting essentially ofsilicon dioxide (SiO₂), silicon nitride (Si₃N₄), aluminum oxide (Al₂O₃),hafnium silicates (HfSiON), tantalum oxide (Ta₂O₅), zirconium oxide(ZrO₂), hafnium oxide (HfO₂), titanium oxide (TiO₂), barium strontiumtitanate oxide (BST), strontium titanate oxide (STO), or combinationsthereof.
 7. The MIM capacitor of claim 2, wherein the top electrodecomprises a first part where the first via is placed, a second partadjacent to the first part with a shared first edge, and a third partadjacent to the second part with a shared second edge, and the firstedge is longer than the second edge.
 8. The MIM capacitor of claim 7,wherein the first part is a rectangle and the second part is atrapezoid, a base edge of the second part shared with the first part islonger than a base edge of the second part shared with the third part.9. The MIM capacitor of claim 7, wherein the third part is a mirrorimage of a combined shape of the first part and the second part.
 10. AnMIM capacitor comprising: a first via placed on a surface of a topelectrode; a second via with a sidewall in contact with a bottomelectrode; and an insulator between the top electrode and the bottomelectrode.
 11. The MIM capacitor of claim 10, further comprising: a topelectrode pick up connected to the first via; and a bottom electrodepick up connected to the second via.
 12. The MIM capacitor of claim 11,wherein: the top electrode pick up is connected to a power source; andthe bottom electrode pick up is connected to a ground signal.
 13. TheMIM capacitor of claim 10, wherein the top electrode comprises amaterial selected from a group consisting essentially of titaniumnitride (TiN), tantalum nitride (TaN), tungsten (W), tungsten nitride(WN), ruthenium (Ru), iridium (Ir), platinum (Pt), Copper (Cu), Cualloy, or combinations of titanium (Ti) with titanium nitride.
 14. TheMIM capacitor of claim 10, wherein the insulator comprises a materialselected from a group consisting essentially of silicon dioxide (SiO₂),silicon nitride (Si₃N₄), aluminum oxide (Al₂O₃), hafnium silicates(HfSiON), tantalum oxide (Ta₂O₅), zirconium oxide (ZrO₂), hafnium oxide(HfO₂), titanium oxide (TiO₂), barium strontium titanate oxide (BST),strontium titanate oxide (STO), or combinations thereof.
 15. The MIMcapacitor of claim 10, wherein the bottom electrode comprises a firstpart which is substantially similar to a shape of the insulator, asecond part adjacent to the first part with a shared first edge, and incontact with the sidewall of the second via with a shared second edge,and the first edge is longer than the second edge.
 16. An MIM capacitorcomprising: a first via placed on a surface of a bottom electrode; asecond via with a sidewall in contact with a top electrode; and aninsulator between the top electrode and the bottom electrode.
 17. TheMIM capacitor of claim 16, further comprising: a top electrode pick upconnected to the second via; and a bottom electrode pick up connected tothe first via.
 18. The MIM capacitor of claim 16, wherein the topelectrode comprises a material selected from a group consistingessentially of titanium nitride (TiN), tantalum nitride (TaN), tungsten(W), tungsten nitride (WN), ruthenium (Ru), iridium (Ir), platinum (Pt),Copper (Cu), Cu alloy, or combinations of titanium (Ti) with titaniumnitride.
 19. The MIM capacitor of claim 16, wherein the insulatorcomprises a material selected from a group consisting essentially ofsilicon dioxide (SiO₂), silicon nitride (Si₃N₄), aluminum oxide (Al₂O₃),hafnium silicates (HfSiON), tantalum oxide (Ta₂O₅), zirconium oxide(ZrO₂), hafnium oxide (HfO₂), titanium oxide (TiO₂), barium strontiumtitanate oxide (BST), strontium titanate oxide (STO), or combinationsthereof.
 20. The MIM capacitor of claim 16, wherein the top electrodecomprises a first part which is substantially similar to a shape of theinsulator, a second part adjacent to the first part with a shared firstedge, and in contact with the sidewall of the second via with a sharedsecond edge, and the first edge is longer than the second edge.